Browse Prior Art Database

Silicon Wafer Oxidation Boat

IP.com Disclosure Number: IPCOM000047582D
Original Publication Date: 1983-Dec-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
Gilmartin, PA Patrick, WJ [+details]

Abstract

An improved silicon wafer oxidation boat is shown in Figs. 1 and 2, wherein Fig. 2 is the end view from the inlet side of Fig. 1. Mixing baffles and a convection baffle are added to a standard open-rail oxidation boat. There is an increased silicon dioxide formation uniformity obtained with this boat compared with the boat without baffles. Nonuniform thermal silicon dioxide thicknesses were observed in 82.5 mm. wafers oxidized in large bore (132 mm.) furnace tubes. In this system oxygen (O2) carrier gas is bubbled through 95 C water at 1 liters/minute to supply water (H2O) vapor. Total flow into the furnace tube is approximately 8 liters/minute.