Buried Contact Process
Original Publication Date: 1983-Dec-01
Included in the Prior Art Database: 2005-Feb-08
This article describes a process for making a buried contact to a silicon substrate through a relatively thin layer of silicon dioxide on the surface of the substrate, as described in U.S. Patent 4,341,009, which further includes the formation of a polycide structure for the buried electrode, and control of buried contact diffusion doping independent of the polysilicon doping. The general purpose of the process is to form a buried contact on the substrate without leaving any residue and/or silicon dioxide in the contact "window" which affects the contact resistance of the electrode. The process includes the following steps described with reference to the figures: 1. Forming a silicon dioxide layer 12 over the silicon substrate 10 (Fig. 1). 2.