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Hole Opening Process for Light Valve Device

IP.com Disclosure Number: IPCOM000048083D
Original Publication Date: 1981-Dec-01
Included in the Prior Art Database: 2005-Feb-08

Publishing Venue

IBM

Related People

Authors:
Altman, C Reisman, A [+details]

Abstract

Precise holes in silicon-on-sapphire substrates usable in semiconductor devices such as mirror array light valve types of structures can be made with relaxed controls on subsequent diffusion and etching by the use of the porous silicon process to form an initial hole. The porous silicon process involves a heavily doped region in silicon which forms a porous structure which in turn rapidly responds to oxidation.