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Heterostructure Long Lifetime Hot Electron Transistor

IP.com Disclosure Number: IPCOM000048084D
Original Publication Date: 1981-Dec-01
Included in the Prior Art Database: 2005-Feb-08

Publishing Venue

IBM

Related People

Authors:
Dumke, WP Fang, FF Fowler, AB [+details]

Abstract

An n-n-n heterojunction hot electron transistor is provided wherein hot electrons are injected from wide gap to narrow gap material (e.g., GaAs to Ge). A reverse biased (wide gap material positive) heterojunction will behave as a blocking contact much the same way as in Schottky barriers. The band edge discontinuities (thus the barrier heights) of the heterostructures will be determined by the composition and/or orientation of the materials.