Browse Prior Art Database

Stable GaAs MOSFET

IP.com Disclosure Number: IPCOM000048085D
Original Publication Date: 1981-Dec-01
Included in the Prior Art Database: 2005-Feb-08

Publishing Venue

IBM

Related People

Authors:
DiMaria, DJ [+details]

Abstract

In order to fabricate a GaAs MOSFET (metal oxide semiconductor field effect transistor), a stable gate insulator fabricated using low temperature processing is needed. Such a process will minimize As out diffusion and therefore the deterioration of the GaAs insulator interface of the channel region of the MOSFET. Attempts to fabricate such an insulating layer for the channel region until the present have not been very successful due to the high number of surface states at the GaAs insulator interface. These surface states caused by As out diffusion have limited the performance of such devices.