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Semiconductor Mesostructure Dielectrics

IP.com Disclosure Number: IPCOM000048086D
Original Publication Date: 1981-Dec-01
Included in the Prior Art Database: 2005-Feb-08

Publishing Venue

IBM

Related People

Authors:
Price, PJ [+details]

Abstract

An electric field, impressed in the layer plane direction of a superlattice type semiconductor crystalline structure having successive 10 to 100 lattice constant thickness layers of different semiconductor materials such as GaAs and GaAlAs, of a magnitude comparable to that required to produce hot electrons in bulk GaAs will modulate the dielectric constant of the structure and hence the conductivity in the direction perpendicular to the layer planes.