Browse Prior Art Database

Multi-Bit Storage FET EAROM Cell

IP.com Disclosure Number: IPCOM000048120D
Original Publication Date: 1981-Dec-01
Included in the Prior Art Database: 2005-Feb-08

Publishing Venue

IBM

Related People

Authors:
Alberts, GS Kotecha, HN [+details]

Abstract

An electrically alterable read only memory (EAROM) cell of the field-effect transistor (FET) type is provided which is capable of storing a large number of digits of information. The cell includes a structure having a control gate and at least one floating gate with a doped insulator system disposed between the floating gate and the control gate. The floating gate and a portion of the control gate are spaced from the surface of a semiconductor substrate. by a thin insulating layer and are disposed between first and second diffusion regions defining a channel region, with a substantial portion of the floating gate being located over the channel region and the remaining portion of the floating gage being located over one of the first and second diffusion regions.