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Method of Making Submicron Channel MOSFET Disclosure Number: IPCOM000048156D
Original Publication Date: 1981-Dec-01
Included in the Prior Art Database: 2005-Feb-08

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Doo, VY [+details]


A MOSFET (metal oxide semiconductor field effect transistor) having a precisely controlled submicron channel length with minimum gate capacitance and low drain resistance is fabricated by a polysilicon deposition and reactive ion etching process. The polysilicon is deposited with controlled thickness on a mandrel and then selectively removed and subsequently used so that the thickness of the polysilicon determines the length of the MOSFET channel.