Browse Prior Art Database

Method of Making Submicron Channel MOSFET

IP.com Disclosure Number: IPCOM000048156D
Original Publication Date: 1981-Dec-01
Included in the Prior Art Database: 2005-Feb-08

Publishing Venue

IBM

Related People

Authors:
Doo, VY [+details]

Abstract

A MOSFET (metal oxide semiconductor field effect transistor) having a precisely controlled submicron channel length with minimum gate capacitance and low drain resistance is fabricated by a polysilicon deposition and reactive ion etching process. The polysilicon is deposited with controlled thickness on a mandrel and then selectively removed and subsequently used so that the thickness of the polysilicon determines the length of the MOSFET channel.