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All Ion Implant Bipolar Transistor Process

IP.com Disclosure Number: IPCOM000048157D
Original Publication Date: 1981-Dec-01
Included in the Prior Art Database: 2005-Feb-08

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Barbee, SG Leas, JM [+details]


Using standard silicon process technology, this is a proposal for a simplified all ion implant bipolar transistor process. Besides significantly improving density it allows for high beta values due to uncompensated emitters as well as for good control over Schottky characteristics. In brief, a blanket subcollector is implanted, epi grown, the base implanted through a screen oxide with only a blockout mask to protect the Schottky, oxide grown, nitride deposited, all contacts/DDI mask, DDI (deep dielectric isolation) process done, and then a unique contact process performed using reactive ion etching (RIE) and ion implantation (II). Detailed Process Step Sequence 1. Blanket arsenic implant (or capsule diffusion) for subcollector. Standard process is used (but without masking) including diffusion and oxidation.