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Method to Fabricate High Performance Lateral on Junction Devices

IP.com Disclosure Number: IPCOM000048159D
Original Publication Date: 1981-Dec-01
Included in the Prior Art Database: 2005-Feb-08

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Anantha, NG Bhatia, HS [+details]


A high performance, shallow collector junction, lateral PNP transistor is made by use of sidewall oxide and Schottky contact techniques whereby very narrow base width and small collector resistance are achieved.