Dismiss
The InnovationQ application will be updated on Sunday, May 31st from 10am-noon ET. You may experience brief service interruptions during that time.
Browse Prior Art Database

Method to Fabricate High Performance Lateral on Junction Devices

IP.com Disclosure Number: IPCOM000048159D
Original Publication Date: 1981-Dec-01
Included in the Prior Art Database: 2005-Feb-08

Publishing Venue

IBM

Related People

Authors:
Anantha, NG Bhatia, HS [+details]

Abstract

A high performance, shallow collector junction, lateral PNP transistor is made by use of sidewall oxide and Schottky contact techniques whereby very narrow base width and small collector resistance are achieved.