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Process for Producing Shallow Emitters with Thick Sidewalls

IP.com Disclosure Number: IPCOM000048162D
Original Publication Date: 1981-Dec-01
Included in the Prior Art Database: 2005-Feb-08

Publishing Venue

IBM

Related People

Authors:
Gaur, SP Lechaton, JS Reith, TM Srinivasas, GR White, JF [+details]

Abstract

In the conventional process for forming emitter contacts, the lateral penetration of platinum silicide allows the injection of holes into the emitter from the emitter sidewall as well as from the intrinsic base. This sidewall injection degrades the injection efficiency and current gain. The following process fabricates a shallow emitter transistor while at the same time providing for thicker emitter sidewalls.