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Browse Prior Art Database

Self Aligned Silicide Buried Contacts

IP.com Disclosure Number: IPCOM000048177D
Original Publication Date: 1981-Dec-01
Included in the Prior Art Database: 2005-Feb-08

Publishing Venue

IBM

Related People

Authors:
De La Moneda, FH [+details]

Abstract

Two implementations of conventional buried contact between a polysilicon layer 2 and a diffusion region 3 are shown in Fig. 1.