The InnovationQ application will be updated on Sunday, May 31st from 10am-noon ET. You may experience brief service interruptions during that time.
Browse Prior Art Database

Characterization Method of Metalloid Contamination in the Plasma Etching Step of Schottky Barrier Diodes

IP.com Disclosure Number: IPCOM000048193D
Original Publication Date: 1981-Dec-01
Included in the Prior Art Database: 2005-Feb-08

Publishing Venue


Related People

Boituzat, J Chanclou, R Leroy, B Fray, H [+details]


It has been demonstrated that the plasma etching step involving CF(4) and/or 0(2) gas might cause an undesired contamination of the barrier contact of Schottky barrier diodes (SBDs) at the silicon-metal interface, particularly when tantalum is involved. This contamination appears to be provoked by carbon atoms and probably by some other metalloids, such as sulphur. As a result of it, the electrical characteristics of the SBDs are modified depending upon the equipment used, thus leading to poor reproducibility.