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Characterization Method of Metalloid Contamination in the Plasma Etching Step of Schottky Barrier Diodes

IP.com Disclosure Number: IPCOM000048193D
Original Publication Date: 1981-Dec-01
Included in the Prior Art Database: 2005-Feb-08

Publishing Venue

IBM

Related People

Authors:
Boituzat, J Chanclou, R Leroy, B Fray, H [+details]

Abstract

It has been demonstrated that the plasma etching step involving CF(4) and/or 0(2) gas might cause an undesired contamination of the barrier contact of Schottky barrier diodes (SBDs) at the silicon-metal interface, particularly when tantalum is involved. This contamination appears to be provoked by carbon atoms and probably by some other metalloids, such as sulphur. As a result of it, the electrical characteristics of the SBDs are modified depending upon the equipment used, thus leading to poor reproducibility.