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Self Aligned MESFET Structure

IP.com Disclosure Number: IPCOM000048263D
Original Publication Date: 1982-Jan-01
Included in the Prior Art Database: 2005-Feb-08

Publishing Venue

IBM

Related People

Authors:
Chang, LL [+details]

Abstract

A self-aligned MESFET (metal silicon field-effect transistor) can be fabricated using a GaAlAs layer on a GaAs substrate, as set forth in the figure. The active conduction region can be simply a semi-insulating GaAs substrate or an epitaxial GaAs layer of any desirable doping concentrations. The crucial step is the thin epitaxial layer of GaAlAs, of the order of a few hundred angstroms, which can be readily achieved by MBE (molecular beam epitaxy), for example. The top metal can either be evaporated or, in the case of Al and some other metals, grown epitaxially. The n source and drain regions can be accomplished by ion-implantation of suitable donors.