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Hybrid MESFET MOSFET Logic Circuit Disclosure Number: IPCOM000048264D
Original Publication Date: 1982-Jan-01
Included in the Prior Art Database: 2005-Feb-08

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Fang, FF Seitz, HK [+details]


While MESFETs (metal silicon field effect transistors) are known for their simplicity in fabrication and capability for low power high performance operation, the low voltage enhancement type of MESFET (E/MESFET) switching device requires rather critical load device characteristics to form an elemental logic inverter. An improvement is provided by incorporating an electrically adjustable load device-buried channel or surface channel depletion MOSFET (D/MOSFET) as an integral part of the inverter.