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Hybrid MESFET MOSFET Logic Circuit

IP.com Disclosure Number: IPCOM000048264D
Original Publication Date: 1982-Jan-01
Included in the Prior Art Database: 2005-Feb-08

Publishing Venue

IBM

Related People

Authors:
Fang, FF Seitz, HK [+details]

Abstract

While MESFETs (metal silicon field effect transistors) are known for their simplicity in fabrication and capability for low power high performance operation, the low voltage enhancement type of MESFET (E/MESFET) switching device requires rather critical load device characteristics to form an elemental logic inverter. An improvement is provided by incorporating an electrically adjustable load device-buried channel or surface channel depletion MOSFET (D/MOSFET) as an integral part of the inverter.