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Poly (1, 3, 5 Triethynylbenzene) Diacetylene Polymer as an MCP Dielectric Disclosure Number: IPCOM000048325D
Original Publication Date: 1982-Jan-01
Included in the Prior Art Database: 2005-Feb-08

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Economy, J Flandera, MA Susko, JR Wheater, RH [+details]


Poly (1, 3, 5 triethtnylbenzene) diacetylene, hereinafter referred to as TEB, is applied in at least one layer on a ceramic or quartz substrate and cured to form a dielectric in an MCP (metallized ceramic polyimide) product for the mounting of silicon chips. In this configuration, a ceramic substrate is provided with a conductive network on its top surface. The dielectric material is disposed over this conductive network, and a second conductive network is disposed on the top of the dielectric material, normally connected to the first conductive network through etched metal-filled vias. A silicon semiconductor chip is mounted on the second conductive network.