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Process For Reactive Ion Etching of Polycide

IP.com Disclosure Number: IPCOM000048463D
Original Publication Date: 1982-Feb-01
Included in the Prior Art Database: 2005-Feb-08

Publishing Venue

IBM

Related People

Authors:
Bennett, RS Ephrath, LM Tsai, MY [+details]

Abstract

A two-step process for selectively etching a polycide (silicide plus polysilicon) structure (Fig. 1A) to a gate oxide in a two-electrode reactive ion etching system has been developed. In the first step, reactive ion etching is used to control line width as well as the etch profile of silicide (WSi(2)). In the second step, plasma etching is used to stop at the underlying oxide.