Bistable Heterojunction Structure
Original Publication Date: 1982-Feb-01
Included in the Prior Art Database: 2005-Feb-08
In a modulation-doped heterostructure as shown in Fig. 1, when electron are heated by a voltage applied along the central layer, they will transfer into the doped GaAlAs and will experience increased scattering so that a negative differential resistance with charge transfer in real space rather than momentum space occurs. The presence of traps in the GaAlAs produces hysteresis so that in principle a memory is constructed by introducing deep traps into the GaAlAs.