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Bistable Heterojunction Structure

IP.com Disclosure Number: IPCOM000048471D
Original Publication Date: 1982-Feb-01
Included in the Prior Art Database: 2005-Feb-08

Publishing Venue

IBM

Related People

Authors:
Dumke, WP Fowler, AB Hartstein, AM [+details]

Abstract

In a modulation-doped heterostructure as shown in Fig. 1, when electron are heated by a voltage applied along the central layer, they will transfer into the doped GaAlAs and will experience increased scattering so that a negative differential resistance with charge transfer in real space rather than momentum space occurs. The presence of traps in the GaAlAs produces hysteresis so that in principle a memory is constructed by introducing deep traps into the GaAlAs.