Dismiss
The InnovationQ application will be updated on Sunday, May 31st from 10am-noon ET. You may experience brief service interruptions during that time.
Browse Prior Art Database

Tunneling Emitter For Hot Electron Transistor

IP.com Disclosure Number: IPCOM000048472D
Original Publication Date: 1982-Feb-01
Included in the Prior Art Database: 2005-Feb-08

Publishing Venue

IBM

Related People

Authors:
Heiblum, M [+details]

Abstract

A tunneling emitter that provides a mostly mono-energetic beam can be achieved using a square barrier which provides optimum current distribution when it is biased to a point where Fowler-Nordheim (FN) regime starts taking place. This is shown in Fig. 1. Since most mono-energetic emission is needed when eV(BE) approximately greater than Phi c, where Phi(c) is the collector barrier height, an optimum emitter has Phi(E) equals Phi(c) Plus Delta, where Delta is a small number which depends on the details of the barrier.