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Self Aligned Ion Implanted Oxidation Barrier For Semiconductor Devices

IP.com Disclosure Number: IPCOM000048541D
Original Publication Date: 1982-Feb-01
Included in the Prior Art Database: 2005-Feb-08

Publishing Venue

IBM

Related People

Authors:
Hansen, HH Thomas, DR [+details]

Abstract

In this method for forming contacts and other structures for semiconductor devices an oxidation barrier layer, silicon nitride, is formed by direct ion implantation of an element, nitrogen, into a silicon substrate. Various horizontal and vertical contact surfaces are formed by ion implantation of nitrogen either vertically or at an angle with respect to a recess formed in the surface of the substrate.