Laser Process For Defining A Precision Resistor
Original Publication Date: 1982-Feb-01
Included in the Prior Art Database: 2005-Feb-08
A process for trimming an ion-implanted resistor is provided wherein dopants in a semiconductor substrate located beneath a passivating layer. e.g., a layer of silicon dioxide, are activated by a continuous wave laser, such as an argon laser, scanning through the passivating layer in a direction perpendicular to the Intended flow of electrons in the resistor.