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Laser Process For Defining A Precision Resistor

IP.com Disclosure Number: IPCOM000048549D
Original Publication Date: 1982-Feb-01
Included in the Prior Art Database: 2005-Feb-08

Publishing Venue

IBM

Related People

Authors:
Bergeron, DL Lasky, JB Smith, PH [+details]

Abstract

A process for trimming an ion-implanted resistor is provided wherein dopants in a semiconductor substrate located beneath a passivating layer. e.g., a layer of silicon dioxide, are activated by a continuous wave laser, such as an argon laser, scanning through the passivating layer in a direction perpendicular to the Intended flow of electrons in the resistor.