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Isolated High Voltage PNPN Diode And SCR Cells

IP.com Disclosure Number: IPCOM000048550D
Original Publication Date: 1982-Feb-01
Included in the Prior Art Database: 2005-Feb-08

Publishing Venue

IBM

Related People

Authors:
Bergeron, DL [+details]

Abstract

PNPN diode and silicon-controlled rectifier (SCR) cells are formed with a lateral PNP transistor providing most transistor action at the surface of a semiconductor substrate merged with a vertical NPN transistor which does not require the use of the substrate for electrical purposes.