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Ultra Dense, High Performance Bipolar Transistor

IP.com Disclosure Number: IPCOM000048552D
Original Publication Date: 1982-Feb-01
Included in the Prior Art Database: 2005-Feb-08

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Hansen, HH Lasky, JB Silverman, RR [+details]


This high density bipolar transistor fabrication method utilizes an ion implantation and laser annealing process to form a buried subcollector and, when used in conjunction with trench isolation, self-aligned polysilicon contact and diffusions and plasma processing, provides extremely small device dimensions.