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Reduction of Overlap Capacitance and Delta L

IP.com Disclosure Number: IPCOM000048581D
Original Publication Date: 1982-Feb-01
Included in the Prior Art Database: 2005-Feb-08

Publishing Venue

IBM

Related People

Authors:
Dockerty, RC [+details]

Abstract

The source-drain implant in the standard double polysilicon process is done after screen silicon dioxide layer 10 is grown. The screen silicon dioxide is typically grown in oxygen and HCl at 925 degrees C. The screen silicon dioxide and second layer of polysilicon sidewall silicon dioxide layer 11 are both about 250 A thick.