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By this process monocrystalline silicon regions embedded in a dielectric substrate can be produced.
English (United States)
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Process For Producing Dielectrically Isolated Single Crystal Silicon
By this process monocrystalline silicon regions embedded in a dielectric
substrate can be produced.
In this process a thick dielectric layer, such as S10(2), Si(3)N(4), etc.,
supported on a suitable substrate, is masked with a suitable mask 12 and
subjected to reactive ion etching, as indicated in Fig. 1. The resultant substrate
has indentations 14, as shown in Fig. 2. The depth of the indentations 14 is
typically in the range of 10 A to a few microns. As indicated in Fig. 3, a doped or
undoped layer 16 of polycrystalline silicon is deposited on the surface, filling
indentations 14. The surface of the substrate is planarized as by grinding,
polishing, or etching, as indicated in Fig. 4, and the resultant regions 18
converted to monocrystalline silicon by the application of scanning laser, E-
beam, or thermal annealing.
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