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Process For Producing Dielectrically Isolated Single Crystal Silicon

IP.com Disclosure Number: IPCOM000048590D
Original Publication Date: 1982-Feb-01
Included in the Prior Art Database: 2005-Feb-08

Publishing Venue

IBM

Related People

Authors:
Chu, WK Tsang, PJ Joy, RC [+details]

Abstract

By this process monocrystalline silicon regions embedded in a dielectric substrate can be produced.