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Method To Make A One-Device Dynamic Memory Cell

IP.com Disclosure Number: IPCOM000048598D
Original Publication Date: 1982-Feb-01
Included in the Prior Art Database: 2005-Feb-08

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Anantha, NG Bhatia, HS Gaur, SP Srinivasan, GR [+details]


Abrupt high-low source and drain junctions obtained using a doped polycrystalline silicon method enhance the data retention time of the one-device dynamic memory cell shown in Fig. 3.