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Scanning X-Ray Lithography

IP.com Disclosure Number: IPCOM000048615D
Original Publication Date: 1982-Feb-01
Included in the Prior Art Database: 2005-Feb-08

Publishing Venue

IBM

Related People

Authors:
Chaput, J Descamps, D Rochet, D [+details]

Abstract

With ever increasing integration densities. VLSI chips require improved lithography techniques, and among the most promising is X-ray lithography. X-ray lithography appears to be a low cost, high throughput alternative in all respects. Different X-ray sources may be used; however, synchrotron radiation has often been suggested as an ideal X-ray source, since it provides highly energetic and well collimated X-ray radiation. Unfortunately, with present X-ray lithography systems using synchrotron radiation, a trade-off between high throughput and good exposure uniformity is to be made. As a matter of fact, the vertical (or transversal) distribution of a synchrotron radiation is gaussian, and rotating the anode beam has a similar characteristic.