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Metal Lift Off Process With A Self Aligned Insulation Planarization

IP.com Disclosure Number: IPCOM000048640D
Original Publication Date: 1982-Feb-01
Included in the Prior Art Database: 2005-Feb-09

Publishing Venue

IBM

Related People

Authors:
Hoeg, AJ Kroll, CT Stephens, GB [+details]

Abstract

This article describes a metal lift-off process employing silicon nitride layers and a reactive ion etching process to provide a planar layer of insulation to support a second level of metal.