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Dry Development of High Resolution, High Sensitivity Electron Beam And/Or X-Ray Monomolecular Resist Materials

IP.com Disclosure Number: IPCOM000048761D
Original Publication Date: 1982-Mar-01
Included in the Prior Art Database: 2005-Feb-09

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Czornyj, G Kellner, B [+details]


Described here is a method for developing images which have been imparted to ultrathin (2.5 to about 100 nm thick) resist materials, built up from ion beam X-ray or E-beam exposed monomolecular films such as described by Barraud, Rosilio and Ruaudel-Texier in the articles "Recent Improvements in Monomolecular Resists," pp.99-100 and "Polymerized Monomolecular Layers: A New Class of Ultrathin Resins for Microlithography," pp.91 to 98, both in Thin Solid Film 68, 1980. Specifically, this method avoids the use of potentially hazardous solvent systems in the development process. This is achieved by means of thermal or "dry development" of the pattern.