The following operators can be used to better focus your queries.
( ) , AND, OR, NOT, W/#
? single char wildcard, not at start
* multi char wildcard, not at start
(Cat? OR feline) AND NOT dog?
Cat? W/5 behavior
(Cat? OR feline) AND traits
Cat AND charact*
This guide provides a more detailed description of the syntax that is supported along with examples.
This search box also supports the look-up of an IP.com Digital Signature (also referred to as Fingerprint); enter the 72-, 48-, or 32-character code to retrieve details of the associated file or submission.
Concept Search - What can I type?
For a concept search, you can enter phrases, sentences, or full paragraphs in English. For example, copy and paste the abstract of a patent application or paragraphs from an article.
Concept search eliminates the need for complex Boolean syntax to inform retrieval. Our Semantic Gist engine uses advanced cognitive semantic analysis to extract the meaning of data. This reduces the chances of missing valuable information, that may result from traditional keyword searching.
In this process, a fluorocarbon film is provided to passivate semi-conductors and/or reactively ion etched aluminum metallurgy.
English (United States)
This text was extracted from a PDF file.
100% of the total text.
Page 1 of 1
Final Passivation of Semiconductors
In this process, a fluorocarbon film is provided to passivate semi-conductors
and/or reactively ion etched aluminum metallurgy.
Reactive ion etching is a preferred method of forming electrical conductors on
semiconductor devices from a blanket layer of metal. The metal is masked by a
suitable photoresist, a pattern exposed and developed, and the substrate
reactively ion etched using a chlorine, fluorine or other reactive specie. While the
reactive ion etching process efficiently shapes the metal, i.e., aluminum or
aluminum-copper, byproducts are deposited which, when combined with
moisture, can later corrode the metallurgy.
Following the etching process, and while still in a vacuum, the resist is
conventionally removed by plasma ashing. In this improved process, the
substrate, without removing from the vacuum chamber, is subjected to a plasma
of CF(4), CF(4)+H(2), C(2)F(6), C(3)F(8), or other fluorocarbon gasses, alone or
in combination, which results in the formation of a passivating film approximately
500 - 1000 A in thickness. This film will completely repel moisture and other
contaminants and will completely seal off metallurgy from the possibility of
corrosion. The same type of film can be used to render completed
semiconductor devices impervious to moisture.