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Low Barrier Schottky Barrier Diode With Improved Stability And Electromigration Performance

IP.com Disclosure Number: IPCOM000048766D
Original Publication Date: 1982-Mar-01
Included in the Prior Art Database: 2005-Feb-09

Publishing Venue

IBM

Related People

Authors:
Lloyd, JR Prokop, GS Sullivan, MJ Zalar, SM [+details]

Abstract

Titanium-tungsten has been found to produce stable low barrier Schottky diodes. When joined to conductive metallurgy, particularly aluminum, a barrier layer is required to prevent the reaction of the titanium tungsten with the aluminum which would degrade the Schottky diode. Chromium has been found to be an excellent metallurgy as a barrier layer. Chromium also protects the titenium-tungsten against electromigration effects.