Self Aligned Metal Bipolar Process
Original Publication Date: 1982-Mar-01
Included in the Prior Art Database: 2005-Feb-09
The present process produces a very compact bipolar device. The emitters are abutted by using a silicon nitride sidewall recessed oxide isolation (ROI). The perimeter-to-area ratio is cut by about half due to the abutting of the emitters. This helps to speed up the device significantly. The use of separate dopings for the intrinsic and extrinsic bases optimizes the device characteristics by cutting down on sidewall injection.