Dismiss
The InnovationQ application will be updated on Sunday, May 31st from 10am-noon ET. You may experience brief service interruptions during that time.
Browse Prior Art Database

Self Aligned Metal Bipolar Process

IP.com Disclosure Number: IPCOM000048780D
Original Publication Date: 1982-Mar-01
Included in the Prior Art Database: 2005-Feb-09

Publishing Venue

IBM

Related People

Authors:
Magdo, IE Malaviya, SD [+details]

Abstract

The present process produces a very compact bipolar device. The emitters are abutted by using a silicon nitride sidewall recessed oxide isolation (ROI). The perimeter-to-area ratio is cut by about half due to the abutting of the emitters. This helps to speed up the device significantly. The use of separate dopings for the intrinsic and extrinsic bases optimizes the device characteristics by cutting down on sidewall injection.