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Metallurgy Structure For Insuring Threshold Stability Of FET Devices Under A Solder Terminal Disclosure Number: IPCOM000048791D
Original Publication Date: 1982-Mar-01
Included in the Prior Art Database: 2005-Feb-09

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Hu, CC Kasprzak, LA [+details]


In integrated circuit devices utilizing FET transistors, the transistors located beneath a solder terminal are vulnerable to leakage induced threshold shift. This structure provides protection for FET devices located beneath the solder terminal.