Browse Prior Art Database

Metallurgy Structure For Insuring Threshold Stability Of FET Devices Under A Solder Terminal

IP.com Disclosure Number: IPCOM000048791D
Original Publication Date: 1982-Mar-01
Included in the Prior Art Database: 2005-Feb-09

Publishing Venue

IBM

Related People

Authors:
Hu, CC Kasprzak, LA [+details]

Abstract

In integrated circuit devices utilizing FET transistors, the transistors located beneath a solder terminal are vulnerable to leakage induced threshold shift. This structure provides protection for FET devices located beneath the solder terminal.