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Browse Prior Art Database

Dielectric Isolation Process

IP.com Disclosure Number: IPCOM000048918D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09

Publishing Venue

IBM

Related People

Authors:
Hulvey, MD Kim, IW [+details]

Abstract

A process is provided which produces a single-crystal semiconductor segment entirely isolated by dielectric material. A silicon dioxide layer is located below the segment with trenches filled with an oxide surrounding the sides of the segment.