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Dielectric Isolation Process

IP.com Disclosure Number: IPCOM000048918D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09

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Hulvey, MD Kim, IW [+details]


A process is provided which produces a single-crystal semiconductor segment entirely isolated by dielectric material. A silicon dioxide layer is located below the segment with trenches filled with an oxide surrounding the sides of the segment.