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Multilayer Resist Structure for Ultraviolet Patterning Disclosure Number: IPCOM000048956D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09
Document File: 2 page(s) / 44K

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Gregor, LV: AUTHOR [+4]


A multilayer resist system patternable by deep or mid ultraviolet (UV) is provided.

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Multilayer Resist Structure for Ultraviolet Patterning

A multilayer resist system patternable by deep or mid ultraviolet (UV) is provided.

Lithographic accuity and resolution may be substantially improved by the use of lower wavelength mid and deep UV during exposure of resists, due to minimized diffraction effects. However, exposure of conventional single-layer resists with deep UV involves long exposure times and poor throughput in order to obtain the resolution advantage. Furthermore, few options are available in the selection of resist materials. Novolac based resists, which are most suitable for RIE (reactive ion etching) applications, show very high absorption coefficients for the mid and deep UV, absorbing most of the incident radiation within the outer
0.5 Mu m. The maximum useful thickness for such materials severely limits their application in most topography situations.

The above limitations may be circumvented by the use of the multilayer resist system shown in Fig. 1. This system comprises a 0.5 Mu m thick top layer 1 patternable by deep or mid UV, a barrier layer 2 approximately 0.1 Mu m thick of plasma-deposited silicon oxide, and a base layer 3 of polysulfone 1.5 MU m thick. The top layer may be of the methacryclic type (e.g., PMMA) or of the novolac type. The top layer is initially exposed and developed conventionally, and is then used as a mask for the reactive ion etching of the barrier layer with a fluorine containing gas, such as CF(4) or CHF...