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Measurement of Axial Resistivity of a Crystal Disclosure Number: IPCOM000048959D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09

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Ghosh, HN Markovits, G Stern, RA [+details]


By applying a voltage pulse of very short duration by means of a coaxial probe to successive locations along an element of a cylindrical semiconductor crystal, the reflection coefficient can be correlated with the resistivity of the crystal to delineate the volume of the crystal from which semiconductor wafers, having the necessary resistivity, should be sliced.