Method of Defining Josephson Junction Area
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09
This article describes an improved method for forming the junction area of Josephson devices. The method features the use of a photoresist mask and a reactive ion etch to form holes in a blanket-deposited layer of SiO which overlays the Josephson base metal. Holes so made permit a more precise definition of the Josephson junction area.