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Browse Prior Art Database

Bifet Process and Technology

IP.com Disclosure Number: IPCOM000048973D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09

Publishing Venue

IBM

Related People

Authors:
Chang, AW Gaind, AK Harris, JH [+details]

Abstract

A bipolar transistor-field effect transistor (BIFET) process technology is provided whereby a high-speed bipolar transistor and a FET may be fabricated in the same chip/wafer, and interconnected to perform the best way each type of device/circuitry can be employed. Basically, this process sequence is engineered to build a bipolar device and FET device at the same time. In product applications, the high-speed, low amplitude bipolar circuitry can be interfaced directly with 5-volt FET memory cells. The bipolar transistor is used interchangeably with FET devices for driver or biasing elements. An example of the BIFET method is as follows: 1. A P- silicon substrate 10 of 10-15 Omega cm is used.