Read/ Write Scheme For Bipolar Random Access Memories Using Schottky Coupled Cells
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09
Schottky coupled memory cell designs have separate circuits for bit selection and for writing the cells (Fig. 1). By using a tri-state bit decode level, one can perform the read and write functions using one simplified circuit. This provides a reduction in chip area and power.