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Read/ Write Scheme For Bipolar Random Access Memories Using Schottky Coupled Cells

IP.com Disclosure Number: IPCOM000048996D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09

Publishing Venue

IBM

Related People

Authors:
Dussault, RD Homa, WS [+details]

Abstract

Schottky coupled memory cell designs have separate circuits for bit selection and for writing the cells (Fig. 1). By using a tri-state bit decode level, one can perform the read and write functions using one simplified circuit. This provides a reduction in chip area and power.