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Step Stress Determination of Product Reliability

IP.com Disclosure Number: IPCOM000049032D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09

Publishing Venue

IBM

Related People

Authors:
Anolick, ES Chen, L Malik, SK [+details]

Abstract

Step stress analysis of a metal on silicon (MOS) or polysilicon on silicon (PSOS) product involves a working model for time to fail, approximate knowledge of a voltage parameter Belta, and representative test structures of the product. This method is not applicable where protect diodes cause a limit of the excess field that can be applied unless the firing point of the protect diodes represent fields much greater than will actually be used.