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Amine N-Oxides as Sensitizers for Resists

IP.com Disclosure Number: IPCOM000049042D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09

Publishing Venue

IBM

Related People

Authors:
Hiraoka, H [+details]

Abstract

High sensitivity and high resolution photo(deep, mid-, and near ultra-violet)- and electron-beam resists in negative working modes are obtained with phenolic novolaks when they are used with amine N-oxides, particularly pyridine N-oxide derivatives, which also can be used as curing and cross-linking agents.