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LCP-HV Fabrication Process

IP.com Disclosure Number: IPCOM000049043D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09

Publishing Venue

IBM

Related People

Authors:
Basso, JE Blose, WL Cooper, SA Diddell, DJ Kindl, TE Liu, CY Nelson, RA Orner, CH Stuart, RR Wu, TY [+details]

Abstract

This semiconductor fabrication process is a modification of an old process and is directed to fabricating semiconductor devices having higher collector-to-emitter breakdown voltages and better operation at higher frequencies. One change is made by increasing the thickness of the epitaxial layer, and another change is effected by decreasing the autodoping concentration, which is more effective than the first change.