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Self Aligned GaAs MESFET Structure

IP.com Disclosure Number: IPCOM000049079D
Original Publication Date: 1982-May-01
Included in the Prior Art Database: 2005-Feb-09

Publishing Venue

IBM

Related People

Authors:
Jackson, TN [+details]

Abstract

Self-aligned GaAs metal semiconductor field-effect transistor (MESFET) structures in which the source and drain contacts are used to align a later deposited gate are generally limited by edge resolution of the alloyed source and drain contacts. A process that will yield smaller gate lengths employing gate formation through a hole in a metallized region is set forth in connection with Figs. 1 to 4.