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Self Adjusting Photolithographic Method Disclosure Number: IPCOM000049176D
Original Publication Date: 1982-May-01
Included in the Prior Art Database: 2005-Feb-09

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Bayer, T Hinkel, H Kempf, J Schmid, G [+details]


In photolithography, a mask pattern is transferred by exposure to a photoresist layer on a substrate. To prevent defects of the mask from being transferred to the photoresist layer, the total exposure required is subdivided into exactly three successive partial exposures. The energy of the partial exposures is chosen so that the total exposure energy required for the pattern is reached after two partial exposures. If the pattern comprises a plurality of identical individual structures arranged in the form of a raster, the mask is shifted relative to the substrate by at least one raster division. In the absence of such a plurality of identical structures, the mask is exchanged against a similar one prior to each partial exposure.