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Method of Producing a Recessed Oxide Isolation in a Silicon Body

IP.com Disclosure Number: IPCOM000049177D
Original Publication Date: 1982-May-01
Included in the Prior Art Database: 2005-Feb-09

Publishing Venue

IBM

Related People

Authors:
Greschner, J Malin, K Thiel, KP Trumpp, HJ [+details]

Abstract

The three essential features of this method are to form recessed oxide isolation (ROI) trenches with vertical sidewalls, to highly dope the bottom of these trenches, and to oxidize at high pressure and low temperature to form the ROI. The use of this method reduces the oxidation bias and thus the "bird's beak" and "bird's head".