Browse Prior Art Database

Simplified Polysilicon/ Silicide Process and Structure

IP.com Disclosure Number: IPCOM000049204D
Original Publication Date: 1982-May-01
Included in the Prior Art Database: 2005-Feb-09

Publishing Venue

IBM

Related People

Authors:
Soderman, DA [+details]

Abstract

A simplified process is disclosed for forming an FET device having silicide converted polycrystalline silicon structures. The simplified seven-mask process provides an enhanced diffusion to polycrystalline silicon low resistance contact by incorporating a silicide interface layer therebetween.