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Simplified Polysilicon/ Silicide Process and Structure Disclosure Number: IPCOM000049204D
Original Publication Date: 1982-May-01
Included in the Prior Art Database: 2005-Feb-09

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Soderman, DA [+details]


A simplified process is disclosed for forming an FET device having silicide converted polycrystalline silicon structures. The simplified seven-mask process provides an enhanced diffusion to polycrystalline silicon low resistance contact by incorporating a silicide interface layer therebetween.