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Control of Film Stress for Improved Device Performance

IP.com Disclosure Number: IPCOM000049238D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09

Publishing Venue

IBM

Related People

Authors:
Brady, MJ Cuomo, JJ Guarnieri, CR Harper, JM [+details]

Abstract

Contact metallurgies used in semiconductor device fabrication have large intrinsic stress values which are grown into the material due to the deposition process. This stress generates microcracks and other defects in the semiconductor devices (1). The defects reduce the carrier mobility and device lifetime with the consequence of reductions in device performance and reliability as well as manufacturing yields. One example of these problems is the dark line defect problem found in GaAs lasers. Extreme examples are microcleavages induced as materials due to contact metallurgy stress. These effects are shown in Figs. 1 and 2, and discussed in (2). Fig. 1 shows the microcleavage of a Si(3)N(4)-coated silicon substrate which was caused by the stress in the deposited niobium contact metallurgy. Fig.