Capillary Masking of Topologically Etched Silicon Substrates
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09
A technique is described for electrically isolating metallization in a a groove. First, a metal layer is deposited over the entire surface. Then, the metallized grooves are filled with a resist or other etch-resistant flowing material using capillary flow action to keep the material in the grooves. Finally, the uncovered metal outside of the grooves is etched away.