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Capillary Masking of Topologically Etched Silicon Substrates

IP.com Disclosure Number: IPCOM000049244D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09

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Brady, MJ Comerford, LD [+details]


A technique is described for electrically isolating metallization in a a groove. First, a metal layer is deposited over the entire surface. Then, the metallized grooves are filled with a resist or other etch-resistant flowing material using capillary flow action to keep the material in the grooves. Finally, the uncovered metal outside of the grooves is etched away.