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The nuclear reaction /27/ Al(p,Upsilon) /28/ Si, where p is a proton ans Upsilon is a and Upsilon is a gamma ray, will produce transmutation doping in a layer of GaAlAs.
English (United States)
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Localized Transmutation Doping of GaAlAs Layers
The nuclear reaction /27/ Al(p,Upsilon) /28/ Si, where p is a proton ans
Upsilon is a and Upsilon is a gamma ray, will produce transmutation doping in a
layer of GaAlAs.
The reaction which will transmute /27/ A1 into /28/ Si has a sharp resonance
width, in the vicinity of 100 electron volts (eV) for protons incident at 992 KeV.
As a result of the sharpness of the resonance and the relation between the depth
and the energy of the proton beam, the transmutation can be made to occur
selectively at a given depth in the GaAlAs layer.
The relation between depth, Z, and energy of the incident proton beam, E(o),
is given by: where E(r) is the resonance energy (=992 KeV) and (dE/dZ') is the
stopping power of the GaAlAs. The relation between E(o) and Z is shown
schematically in the figure.
Thus, by controlling E(o) it is possible to transmute /27/ Al into /28/Si at a
given depth Z into the material. The width, deltaZ, of this transmuted region is
extremely sharp since the energy range in which the process can occur
(approximately 100 eV) is very narrow.
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