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Selective Rie Of TiW Films

IP.com Disclosure Number: IPCOM000049328D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09

Publishing Venue

IBM

Related People

Authors:
Logan, JS Schaible, PM Schwartz, GC [+details]

Abstract

This method allows TiW to be etched by RIE (reactive ion etching) at a high rate and with good selectivity over Al, AlCu alloys, Si(3)N(4), SiO(2) and silicon.